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Contract Opportunity

Opportunity:

Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop and commercialize its Engineered Current-Density Profile Diode Laser technology.

Background:

Laser diodes efficiently convert electrical power to laser light output but are always in need of further efficiency improvements. Improved efficiency translates directly into more compact laser systems with significantly reduced thermal dissipation challenges.

Description:

This invention proposes to engineer the current density along the length of a laser diode to overcome the penalty associated with non-uniformity resulting from asymmetry in the gain, photon or carrier density despite having uniform contact. Optimizing the current density profile enables diode lasers to operate with greater power conversion efficiency or operate with equivalent power conversion efficiency but with greater total output power. Two schemes for controlling current injection profile are proposed: 1) emitting aperture buried in dielectric and connected with through via, 2) proton implantation to render appropriate semiconductor regions non-conductive.

Advantages/Benefits:

• Overcomes detrimental asymmetries in gain, photon and current densities that result when scaling length of conventional laser diodes.


• Enables operation at greater power conversion efficiency or operation with equivalent power conversion efficiency but with greater total output power.


• Applicable to GaN, GaAs and InP devices operating at wavelengths spanning from 300nm to 2.1µm

Potential Applications:

• Higher power laser diode sources for lithography and metrology, biotechnology and materials processing applications.

Development Status:

Current stage of technology development: TRL2-3

LLNL has filed for patent protection on this invention.

U.S. Patent No. 11,658,460 Engineered Current-Density Profile Diode Laser published 5/23/2023

LLNL is seeking industry partners with a demonstrated ability to bring such inventions to the market. Moving critical technology beyond the Laboratory to the commercial world helps our licensees gain a competitive edge in the marketplace. All licensing activities are conducted under policies relating to the strict nondisclosure of company proprietary information.

Please visit the IPO website at https://ipo.llnl.gov/resources for more information on working with LLNL and the industrial partnering and technology transfer process.

Note: THIS IS NOT A PROCUREMENT. Companies interested in commercializing LLNL's Engineered Current-Density Profile Diode Laser technology should provide an electronic OR written statement of interest, which includes the following:

1. Company Name and address.


2. The name, address, and telephone number of a point of contact.


3. A description of corporate expertise and/or facilities relevant to commercializing this technology.

Please provide a complete electronic OR written statement to ensure consideration of your interest in LLNL's Engineered Current-Density Profile Diode Laser technology.

The subject heading in an email response should include the Notice ID and/or the title of LLNL’s Technology/Business Opportunity and directed to the Primary and Secondary Point of Contacts listed below.

Written responses should be directed to:

Lawrence Livermore National Laboratory

Innovation and Partnerships Office

P.O. Box 808, L-779

Livermore, CA 94551-0808

Attention: IL-13302

Attachments/Links