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Contract Opportunity

Opportunity:

Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop its method to fabricate superjunction devices by field-assisted diffusion of dopants.

Background:

P-type doping of gallium nitride (GaN) enabled the proliferation of light emitting diodes and laser diodes based on III-Nitride elements (GaN, indium nitride, aluminum nitride, and alloys thereof). It is also useful in high power electronics, such as diodes and transistors. The problem that the industry faced is the theoretical limit of silicon in power semiconductors. The superjunction concept has played a fundamental role in overcoming this limit. This invention provides a novel method in creating superjunction devices.

Description:

The approach is to use Charge Balance Layers (CBLs) to create a superjunction device in wide bandgap materials. These CBLs enable the device to effectively spread the electric field over 2- or 3-dimensions within a semiconductor voltage sustaining layer instead of 1-dimension, thereby increasing the maximum voltage a device is capable of withstanding. The challenge of using CBLs is the difficulty of complex dopant patterning. LLNL has filed a U.S. Patent (Application No. 17/166,962 Field Assisted Interfacial Diffusion Doping Through Heterostructure Design) which describes a simpler solution compared to MOCVD or ion implantation. In addition, by measuring the film impedance or optical properties during diffusion, a feedback mechanism can be established such that tight control of the resulting doping profile can be monitored.

The novelty is the use of field-assisted diffusion of dopants to create the CBLs needed for a superjunction device.

Advantages/Benefits:

• Reduced manufacturing cost of superjunction devices.


• Can use commercially available semiconductor manufacturing equipment


• Controllable doping profile during deposition

Potential Applications:

• High power electronics


• LEDs and Laser Diodes

Development Status:

Current stage of technology development: TRL 2 (Technology concept and application formulated)

LLNL has filed for patent protection on this invention.

U.S. Patent No. 10,930,506 Gallidation Assisted Impurity Doping issued 2/23/2021.

U.S. Patent Application Publication No. 2021/0257463 Field Assisted Interfacial Diffusion Doping Through Heterostructure Design published 8/19/2021

LLNL is seeking industry partners with a demonstrated ability to bring such inventions to the market. Moving critical technology beyond the Laboratory to the commercial world helps our licensees gain a competitive edge in the marketplace. All licensing activities are conducted under policies relating to the strict nondisclosure of company proprietary information.

Please visit the IPO website at https://ipo.llnl.gov/resources for more information on working with LLNL and the industrial partnering and technology transfer process.

Note: THIS IS NOT A PROCUREMENT. Companies interested in commercializing LLNL's superjunction devices should provide a statement of interest, which includes the following:

1. Company Name and address.

2. The name, address, and telephone number of a point of contact.

3. A description of corporate expertise and/or facilities relevant to commercializing this technology.

Please provide your electronic OR written statement by May 11, 2023. (within 30 days from the date this announcement is published) to ensure consideration of your interest in LLNL's superjunction devices.

The subject heading in an email response should include the Notice ID and/or the title of LLNL’s Technology/Business Opportunity and directed to the Primary and Secondary Point of Contacts listed below.

Written responses should be directed to:

Lawrence Livermore National Laboratory

Innovation and Partnerships Office

P.O. Box 808, L-779

Livermore, CA 94551-0808

Attention: IL-13324Plus

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